| PART |
Description |
Maker |
| 2SD1196 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
|
SANYO SEMICONDUCTOR CO LTD
|
| SFBUY57 BUY57 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
TT electronics Semelab, Ltd.
Seme LAB
|
| SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor
120 V, 100 A high energy NPN transistor
100 V, 100 A high energy NPN transistor
140 V, 100 A high energy NPN transistor
160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
| 2SD2162 2SD2162-AZ |
8 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
| NTE248 NTE247 |
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| MJF122 MJE122 ON2045 MJF127 MF122 MJE127 |
COMPLEMENTARY SILICON POWER DARLINGTONS 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| FZT853TA |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Diodes, Inc.
|
| TIP122-6226 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Intersil, Corp.
|
|
