| PART |
Description |
Maker |
| TC1279-5ENB TC1278 TC1278-10ENB TC1278-15ENB TC127 |
3-Pin Reset Monitors for 5V Systems 3引脚复位监控器的5V系统
Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):3A; Non Repetitive Forward Surge Current Max, Ifsm:150A; Reverse Recovery Time, trr:50ns; Forward Voltage Max, VF:1V
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| DTV56 DTV56B DTV56F |
High Voltage Damper Diodes, Forward Current 10A, Reverse Recovery Time 135ns, Reverse Voltage 1500V
|
Vishay
|
| 1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41
Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
|
Littelfuse, Inc.
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| SBL3040PT SBL3030PT |
Dual Schottky Rectifier, Forward Current 30A, Reverse Voltage 40V
Dual Schottky Rectifier, Forward Current 30A, Reverse Voltage 30V
|
Vishay
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| 1SV252 |
Reverse voltage VR 50 V Forward current IF 50 mA
|
TY Semiconductor Co., Ltd
|
| MBRB1090 MBRB10100 MBRF10100 MBR1090 MBRF1090 MBR1 |
High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 10A
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 2CL03 |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 3KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| R2000 |
High Voltage Silicon Rectifiers Reverse Voltage 1200 to 2000 Volts Forward Current 0.2 to 0.5 Ampere
|
GOOD-ARK Electronics
|
