PART |
Description |
Maker |
GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
SG50N06D3S SG50N06D2S |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors ETC[ETC] List of Unclassifed Manufacturers
|
IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
SG200N06S |
Discrete IGBTs
|
Sirectifier Global Corp... Sirectifier Semiconductors Sirectifier Semiconduct...
|
IXBT42N170 IXBH42N170 |
Discrete IGBTs
|
IXYS
|
SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs 8A 500V P-Channel IGBTs Mechanism, 2-inch w/front paper feed and partial cutter 8A/ 500V P-Channel IGBTs
|
http:// INTERSIL[Intersil Corporation]
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes Fast IGBT in NPT-technology IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ... IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220 HighSpeed 2-Technology From old datasheet system
|
INFINEON[Infineon Technologies AG]
|