PART |
Description |
Maker |
GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
IXBN42N170A |
Discrete IGBTs
|
IXYS
|
SG45N12T |
Discrete IGBTs
|
Sirectifier Semiconduct... Sirectifier Semiconductors Sirectifier Global Corp.
|
SG12N06DT SG12N06T |
Discrete IGBTs
|
Sirectifier Semiconductors Sirectifier Global Corp.
|
SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IXBH9N140G IXBH9N160G |
Discrete IGBTs High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes Fast IGBT in NPT-technology IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
2SH29 |
IGBTs Silicon N Channel IGBT High Speed Power Switching
|
Hitachi Semiconductor Hitachi,Ltd.
|