| PART |
Description |
Maker |
| IXTP1R6N100D2 IXTA1R6N100D2 IXTY1R6N100D2 |
Depletion Mode MOSFET
|
IXYS Corporation
|
| IXTP3N50D2 IXTA3N50D2 |
Depletion Mode MOSFET
|
IXYS Corporation
|
| LND250K1 LND250 |
N-Channel Depletion-Mode MOSFET
|
Supertex Inc
SUTEX[Supertex, Inc]
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| IXTU02N50D |
High Voltage MOSFET N-Channel, Depletion Mode
|
IXYS Corporation
|
| UF601G-AE3-R UF601L-AE3-R |
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
|
Unisonic Technologies
|
| ND2012L ND2020L 70197 |
N-Channel Depletion-Mode MOSFET Transistors(最大漏源导通电2Ω，夹断电.16A的N沟道耗尽型MOSFET晶体
From old datasheet system
|
Vishay Intertechnology,Inc.
|
| CPC3703CTR CPC3703 CPC3703C |
N-Channel Depletion-Mode Vertical DMOS FETs
0.36 A, 250 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Clare, Inc.
CLARE INC
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| DN3145N8-G |
Depletion Mode MOSFETs
|
Microchip
|
