| PART |
Description |
Maker |
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| M5M5T5636UG-20 M5M5T5636UG-25 M5M5T5636UG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
RECTIFIER SCHOTTKY SINGLE 1A 40V 45A-Ifsm 0.53Vf 0.1A-IR SMB 3K/REEL
|
Mitsubishi Electric Corporation
|
| CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
| SBA100-04Y SBA100-04YSMP-FD |
10 A, 40 V, SILICON, RECTIFIER DIODE SMP-FD, 3 PIN
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
40V 10A Rectifier
40V/ 10A Rectifier
|
SANYO Semiconductor Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| X9316W X9316WP X9316WP3 X9316WPI X9316WPI3 X9316WP |
E 2 POT?Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT?/a> Nonvolatile Digital Potentiometer
E 2 POT Nonvolatile Digital Potentiometer
E 2 POT⑩ Nonvolatile Digital Potentiometer
BRIDGE RECTIFIER, 1.2A 40VBRIDGE RECTIFIER, 1.2A 40V; Voltage, Vrrm:120V; Voltage, input RMS:40V; Current, output max:2.5A; Phases, No. of:1; Current, Ifs max:80A; Length / Height, external:12mm; Depth, external:5mm; Width, 首页2锅⑩非易失数字电位器
E2POT nonvolatile digital potentiometer
|
XICOR[Xicor Inc.]
NXP Semiconductors N.V.
|
| IRF7470 |
Power MOSFET(Vdss=40V/ Rds(on)max=13mohm/ Id=10A)
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
|
IRF[International Rectifier]
|
| CT50E CT35E CT130E CT120E CT200E CT110E |
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|58V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|40V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|138V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|125V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|215V V(BO) MAX|15UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|118V V(BO) MAX|25UA I(S)|DO-204AL 移民部（双向二极管晶闸管）| 118V五（公报）最大| 25UA我（县）|的DO - 204AL
|
NJR
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STP45NE06 STP45NE06FP STP45NEO6 |
N-CHANNEL 60V - 0.022 OMH - 45A - TO-220/TO-220FP STRIPFET POWER MOSFET
N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW45NM50FD STW45NM50F |
N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh?Power MOSFET With FAST DIODE
N-CHANNEL 500V 0.07 OHM 45A TO-247 FDMESH POWER MOSFET
N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh⑩Power MOSFET With FAST DIODE
|
STMICROELECTRONICS[STMicroelectronics]
|
| CDBV6-00340TI-G |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=30mA
|
Comchip Technology
|
