| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| RLT650-500-T |
High Power Visible Laser Diode
|
Roithner LaserTechnik GmbH
|
| RLT650-1000-T |
High Power Visible Laser Diode
|
Roithner LaserTechnik GmbH
|
| RLT635100G |
High Power Visible Laser Diode
|
Roithner LaserTechnik GmbH
|
| HL6526FM |
Visible High Power Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL6740FG |
Dual Beam Visible Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL6361MG HL6360MG |
Low Operating Current Visible Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL6334MG HL6333MG |
(HL6334MG) Low Operating Current Visible Laser Diode
|
HITACHI[Hitachi Semiconductor]
|
| HL6501MG |
Visible High Power Laser Diode for DVD-RAM(AlGalnP激光二极管)
|
Hitachi,Ltd.
|
| HL6378DG |
Low Operating Current Visible High Power Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
