| PART |
Description |
Maker |
| MA4VAT2007-1061T |
High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz
|
MACOM[Tyco Electronics]
|
| BM831 |
0.7~1.4GHz High IIP3 GaAs MMIC Mixer
|
BeRex Corporation
|
| BFR380L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for high IIP3 LNA and Low Phase Noise Oscillators
|
INFINEON[Infineon Technologies AG]
|
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| MGA-725M4 MGA725M4 MGA-725M4-BLK MGA-725M4-TR1 MGA |
MGA-725M4 · 3V LNA with Bypass Switch, 2 to 14dBm Adjustable IIP3, MiniPak Package
DEMO-MGA-725M4 · Demonstration circuit board for MGA-725M4 (2 GHz)
Low Noise Amplifier with Bypass Switch In Miniature Leadless Package
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0309-10 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| EL0037 |
High Power Limiters 2.7 GHz to 2.9 GHz
|
Micronetics, Inc.
|
| EL0095 |
High Power Limiters 8 GHz to 12 GHz
|
Micronetics, Inc.
|
| EL0092 |
High Power Limiters 0.15 GHz to 0.45 GHz
|
Micronetics, Inc.
|
