| PART |
Description |
Maker |
| H11D3M |
IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV)
|
Fairchild Semiconductor Corporation
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 2SD1949 |
High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA
|
TY Semiconductor Co., L...
|
| 399100104 0399100104 |
10.16mm (.400) Beau Eurostyle? Fixed Mount PCB Terminal Block, High Voltage, High Power 60A, 4 Circuits
10.16mm (.400") Beau垄芒 Eurostyle垄芒, Fixed Mount PCB Terminal Block, High Voltage, High Power 60A, 4 Circuits
|
Molex Electronics Ltd.
|
| 2SB935A |
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
|
TY Semiconductor Co., L...
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| 2SA1213 |
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA141612 EN2005C EN2005 |
Bipolar Transistor, (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| EN2007C EN2007 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
