| PART |
Description |
Maker |
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| 2SA1313 E000506 |
TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| KSD986 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE)
|
SAMSUNG[Samsung semiconductor]
|
| KSA128109 KSA1281YBU |
Audio Power Amplifier
Low Frequency Power Amplifier
|
Fairchild Semiconductor
|
| CPH5905 |
High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
| 2SD468 |
LOW FREQUENCY POWER AMPLIFIER
|
Unisonic Technologies
|
| TA8227AP |
LOW FREQUENCY POWER AMPLIFIER
|
Unisonic Technologies Co Ltd
|
| UA8229 |
LOW FREQUENCY POWER AMPLIFIER
|
Unisonic Technologies
|
