Part Number Hot Search : 
Z4B27 SW6403 4KE20 UM3511A 073809 VDZ24B FSL230R4 F4001
Product Description
Full Text Search

2N5429 - COLLECTOR EMITTER VOLTAGE

2N5429_7365497.PDF Datasheet

 
Part No. 2N5429 2N5430
Description COLLECTOR EMITTER VOLTAGE

File Size 171.50K  /  1 Page  

Maker

New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2N5400
Maker: MOTOROLA
Pack: TO-92
Stock: Reserved
Unit price for :
    50: $0.11
  100: $0.11
1000: $0.10

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ 2N5429 2N5430 Datasheet PDF Downlaod from Datasheet.HK ]
[2N5429 2N5430 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 2N5429 ]

[ Price & Availability of 2N5429 by FindChips.com ]

 Full text search : COLLECTOR EMITTER VOLTAGE


 Related Part Number
PART Description Maker
2SB564A Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
USHA India LTD
2SA954 Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
USHA India LTD
MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP 2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
Microchip Technology Inc.
DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes
Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10
IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
MAXIM - Dallas Semiconductor
X4165S8 X4163 X4165V8I-2.7A X4165V8-2.7A X4163S8-4 CPU Supervisor with 16K EEPROM 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
IGBT Module; Continuous Collector Current, Ic:75A; Collector Emitter Saturation Voltage, Vce(sat):3V; Collector Emitter Voltage, Vceo:1200V; Leaded Process Compatible:Yes; Package/Case:D61; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
   CPU Supervisor with 16K EEPROM
Intersil, Corp.
http://
Intersil Corporation
2SB1537 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
TY Semiconductor Co., Ltd
BSP50BSP52 BSP51 Q62702-P1165 BSP50 BSP50BBSP52 BS NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
From old datasheet system
RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 10 Watts
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
SMBT2222AE6327HTSA1 Low collector-emitter saturation voltage
Infineon Technologies AG
PC451 High Collector-emitter Voltage Photocoupler
Sharp Microelectronics
2SJ621 2SJ621-T2B 2SJ621-T1B RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
NEC Corp.
NEC[NEC]
 
 Related keyword From Full Text Search System
2N5429 Specification 2N5429 Processors 2N5429 Silicon 2N5429 Switch 2N5429 State
2N5429 pin 2N5429 Stereo 2N5429 Datasheet 2N5429 ghz 2N5429 inductors
 

 

Price & Availability of 2N5429

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.52568697929382