PART |
Description |
Maker |
RJK03E5DPA-00-J5A RJK03E5DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0213DPA-00-J5A RJK0213DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03P9DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
MCH5810 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
D4SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
PU7457 PUB4753PU7457 |
PUB4753 (PU7457) - N-Channel Power F-MOS FET (with built-in zener diode) Power Transistor Arrays (F-MOS FETs)
|
Matsshita / Panasonic
|
PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
R3130N04 R3131N R3131N18EA-TR-FB |
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 Low Voltage Detector with Built-in Delay Circuit
|
RICOH COMPANY LTD RICOH electronics devices division
|
STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|