PART |
Description |
Maker |
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1005 TBB1005EMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB505M BB505MES |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor Hitachi,Ltd.
|
BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|
BB303M |
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
BB304M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
BB503C BB503 BB5.3 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|