| PART |
Description |
Maker |
| PIIPM25P12B008 PIIPM25P12B008X |
Programmable isolated intelligent power module, a 25A, 1200V, three-phase inverter for 15kW industrial and servo motors with on-board programmable DSP, current sensing, isolation, gate drivers and power stage.
|
International Rectifier
|
| GBPC25005W GBPC2501 GBPC2510 GBPC2510W GBPC25005 G |
Dual General-Purpose Operational Amplifier 8-SOIC 0 to 70
25A GLASS PASSIVATED BRIDGE RECTIFIER
8 A, 5-V Input Non-Isolated Wide-Output Adjust SIP Module w/Auto-Track 8-SIP MODULE -40 to 85 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
50-A, 8-V to 14-V Input, Non-Isolated, Wide-Output Adjust, Vertical Power Module 21-DIP MODULE -40 to 85 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Isolated Flyback Switching Regulator with 9V Output 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND ST |
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh?/a> II Power MOSFET (with fast diode)
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET (with fast diode)
N-channel 600V - 0.11楼? - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh垄芒 II Power MOSFET (with fast diode)
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
|
STMicroelectronics
|
| ECG5699 ECG5683 ECG5687 ECG56019 ECG56015 |
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA 可控硅| 600V的五（DRM）的| 25A条口（T）的有效值|08AA
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 25A条口T）的有效值|20
|
ITT, Corp.
Advanced Interconnections, Corp.
|
| RFP25N05 FN2112 |
25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET
25A, 50V, 0.047 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2N5883 2N5883-D |
Power 25A 60V Discrete PNP
Complementary Silicon High-Power Transistors
|
ON Semiconductor
|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MS5A-3S1.8 MS5A-3S2.5-Z MS5A-5S3.3 BOURNSINC-MS5A- |
Switch-Power Non-Isolated DC-DC Converters 3.3V in 1.8V 5A out
1-OUTPUT DC-DC REG PWR SUPPLY MODULE
Switch-Power Non-Isolated DC-DC Converters 5V in 3.3V 5A out
|
BOURNS INC
|
| FCA-325-CY8 |
POWER/SIGNAL RELAY, 3PDT, MOMENTARY, 4600mW (COIL), 25A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
POWER/SIGNAL RELAY, 3PDT, MOMENTARY, 25A (CONTACT), PANEL MOUNT
|
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