PART |
Description |
Maker |
RJK03M2DPA RJK03M2DPA-15 |
N Channel Power MOS FET High Speed Power Switching 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ541 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
2SJ552 2SJ552L 2SJ552S 2SJ552L/S |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
|
HITACHI[Hitachi Semiconductor]
|
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
RJK03M1DPA-00-J5A RJK03M1DPA-15 |
30V, 50A, 2.3mΩmax.N Channel Power MOS FET 30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK5014DPK-00-T0 RJK5014DPK09 RJK5014DPK-00 |
19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HAT1021R |
Silicon P Channel Power MOS FET(P沟道功率MOSFET) P通道功率MOS FET性(P沟道功率MOSFET的) Silicon P Channel Power MOS FET(P娌?????MOSFET)
|
Hitachi,Ltd.
|
RJK5012DPP-00-T2 RJK5012DPP |
12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|