| PART |
Description |
Maker |
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| EC3H06B |
UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| BAR18FILM |
SILICON, UHF BAND, MIXER DIODE
|
ST Microelectronics
|
| BAT29 |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| BAT19-ARX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| 1SS86RF |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
|
| MA342-B |
UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-30
|
PANASONIC CORP
|
