| PART |
Description |
Maker |
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| IRG7PH35UD1PBF IRG7PH35UD1PBF-15 |
Low Switching Losses
|
International Rectifier
|
| HYG15P120B1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRGB4064DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| SIGC12T120E |
low turn-off losses
|
Infineon Technologies A...
|
| IRGB4059DPBF IRGB4059DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| MKP1845 |
C-values 1000 pF - 4.7 μF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, Low profile, AXIAL
|
Vishay
|
