PART |
Description |
Maker |
VN2001L-TR1 |
Trans MOSFET N-CH 200V 0.56A 3-Pin TO-226AA T/R
|
Vishay Siliconix
|
SIA456DJ-T1-GE3 |
Trans MOSFET N-CH 200V 1.1A 6-Pin PowerPAK SC-70 T/R
|
Vishay Siliconix
|
APT20M45BVR |
POWER MOS V 200V 56A 0.045 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT20M45SVR |
POWER MOS V 200V 56A 0.045 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75 |
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs 30V N-Channel PowerTrench MOSFET 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs 56A 100V 0.025 Ohm N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A) Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A 200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|