| PART |
Description |
Maker |
| ELANSC520-100AC ELANSC520-100AI |
PLASTIC BGA, CAVITY UP(BGA)
|
ADVANCED MICRO DEVICES INC
|
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
| GWIXP455AAC EWIXP455AACT EWIXP465AAC EWIXP465AAD E |
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
266 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
266 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
667 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
INTEL CORP
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IBM25PPC750FX-GB0132T IBM25PPC750FX-EB1032T IBM25P |
32-BIT, 600 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
32-BIT, 733 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
32-BIT, 700 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
|
Fox Electronics
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
| M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
|
