| PART |
Description |
Maker |
| A-7859-2561 7859-2561N 15-29-1026 0015291026 |
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (30μ) Gold (Au), 2 Circuits, with Pin Stop
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (30渭") Gold (Au), 2 Circuits, with Pin Stop
2.54mm (.100") Pitch C-Grid垄莽 Shunt Terminal Housings, (30楼矛") Gold (Au), 2 Circuits, with Pin Stop
|
Molex Electronics Ltd.
|
| TPSC226K020R-MR TPSC107K010R-MR TPSV107K020R-MR TP |
CAP. 100UF MINIREEL 100PCS
CAP. 220UF MINIREEL 100PCS
CAP. 22UF MINIREEL 200PCS
CAP. 150UF MINIREEL 100PCS
CAP. 6.8UF MINIREEL 100PCS
CAP. 6.8UF MINIREEL 200PCS
第10uF的MINIREEL 200
第2.2uF的MINIREEL 200
第22UF MINIREEL 200
第15UF MINIREEL 100
第4.7UF MINIREEL 200
第47UF MINIREEL 200
第470UF MINIREEL 100
第3.3UF MINIREEL 200
第220UF MINIREEL 100
第68UF MINIREEL 200
第33UF MINIREEL 100
第330UF MINIREEL 100
第1.5UF MINIREEL 200
CAP. 68UF MINIREEL 100PCS 第68UF MINIREEL 100
CAP. 22UF MINIREEL 100PCS 第22UF MINIREEL 100
CAP. 47UF MINIREEL 100PCS 第47UF MINIREEL 100
CAP. 15UF MINIREEL 200PCS 第15UF MINIREEL 200
CAP. 470UF MINIREEL 100PCS
CAP. 33UF MINIREEL 100PCS
CAP. 4.7UF MINIREEL 200PCS
CAP. 10UF MINIREEL 200PCS
|
3M Company
Vishay Intertechnology, Inc.
Panduit, Corp.
|
| 15-29-1025 0015291025 A-7859-2A554 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, (15渭") Gold (Au), 2 Circuits, with Pin Stop
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, (15μ) Gold (Au), 2 Circuits, with Pin Stop
|
Molex Electronics Ltd.
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| CR0603-FX8252E CR0603-FX8252ELF CR0603 CR0603-JW82 |
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 182 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 33.2 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 68100 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 10 ohm, SURFACE MOUNT, 0603
SMD Chip Resistors 3 OHM 5% RESISTOR, 0.1 W, 5 %, 500 ppm, 3 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 1000000 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 680 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 270 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.25 W, 5 %, 200 ppm, 2200 ohm, SURFACE MOUNT, 1206
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 27 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 1000000 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.25 W, 5 %, 200 ppm, 22000 ohm, SURFACE MOUNT, 1206
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 1500 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.25 W, 5 %, 200 ppm, 120 ohm, SURFACE MOUNT, 1206
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 6800 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.25 W, 5 %, 200 ppm, 10000000 ohm, SURFACE MOUNT, 1206
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.25 W, 5 %, 200 ppm, 100000 ohm, SURFACE MOUNT, 1206
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 44200 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 2000 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 120 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 51.1 ohm, SURFACE MOUNT, 0603
SMD Chip Resistors 2.4ohm 5% RESISTOR, 0.125 W, 5 %, 500 ppm, 2.4 ohm, SURFACE MOUNT, 0805
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 30.1 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 1 megohm, 1 %, 100 ppm, .100 W RESISTOR, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.25 W, 5 %, 200 ppm, 10000 ohm, SURFACE MOUNT, 1206
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W RESISTOR, 0.1 W, 5 %, 200 ppm, 10000 ohm, SURFACE MOUNT, 0603
|
Vectron International, Inc.
Bourns, Inc.
Bourns Inc.
BOURNS[Bourns Electronic Solutions]
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S5.6S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| TLWJ1100T11 TLWJ1100 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Panel Circuit Indicator
|
Toshiba Corporation
Toshiba Semiconductor
|
| TMP47C102M TMP47C202P |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.37; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba Corporation
Toshiba, Corp.
|
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