PART |
Description |
Maker |
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI Advanced Semiconductor, Inc.
|
ZHCS1000 ZHCS1000TA |
High Current Schottky Diode SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT 1 A, SILICON, SIGNAL DIODE SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
|
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC Diodes Incorporated
|
MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
ABP9001-868 ABP9002-806 ABP9002-700 ABM3001-868 AB |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
Vishay Beyschlag Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SOT23 SILICON HIGH CURRENT 0.5 A, SILICON, SIGNAL DIODE High Current Schottky Diode
|
ZETEX[Zetex Semiconductors] Diodes Incorporated
|
BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基(双)二极 SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies] Comchip Technology
|
STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
STPSC606 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
MA4E2513 MA4E2513-1289 MA4E2513L-1289 MA4E2513L-12 |
SURMOUNT Low Barrier Tee 301Footprint Silicon Schottky Diodes SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes
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