PART |
Description |
Maker |
2SC2881 |
Voltage Amplifier Applications High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
2SD814A |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
2SB1220 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
2SC5211 |
High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V
|
TY Semiconductor Co., Ltd
|
CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
2SC4616 |
Large current calcity (IC=2A) High blocking voltage(VCEO 400V)
|
TY Semiconductor Co., Ltd
|
2SC5161 |
High breakdown voltage.VCEO = 400V NPN silicon transistor
|
TY Semiconductor Co., Ltd
|
CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
UDT1605G-AB3-R UDT1605L-AB3-R |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
Unisonic Technologies
|
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
2SC4102 2SA1514K A5800309 |
High-Voltage Amplifier Transistor (-120V, -50mA) From old datasheet system
|
ROHM
|