| PART |
Description |
Maker |
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| Q62702-F1063 BFT93 |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
| 2N1025 2N2176 2N1475 2N1027 2N1474 2N329B 2N1654 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-5
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-5
Silicon Transistors
|
Semitronics
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五（巴西）总裁| 500mA的一（c）|37VAR
|
SMSC, Corp.
|
| BC556B BC556 BC558B BC557B BC557C BC557A |
PNP Amplifier Transistor(集电发射极电45V，集电极-基极电压-50V的PNP放大器晶体管) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
Amplifier Transistors(PNP Silicon)
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| KRA521T KRA523T KRA524T KRA522T KRA526T KRA525T |
Built in Bias Resistor
(KRA521T - KRA526T) EPITAXIAL PLANAR PNP TRANSISTOR
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
800 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PBSS301PD PBSS301PD115 |
20 V, 4 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
20 V, 4 A PNP low VCEsat (BISS) transistor 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
