PART |
Description |
Maker |
RJK6032DPD-00J2 RJK6032DPD-15 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6024DPE RJK6024DPE-15 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6014DPP-E0 |
600V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6015DPM-00T1 |
600V - 21A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S8DPK-M0 RJK60S8DPK-M0-T0 |
600V - 110A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET From old datasheet system Switching (600V, 4A)
|
ROHM
|
2SK2070 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开 MOS Field Effect Transistor
|
NEC, Corp. NEC[NEC]
|
2SK2055 D11226EJ1V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING From old datasheet system MOS Field Effect Transistor
|
NEC[NEC]
|