| PART |
Description |
Maker |
| MSE20N06N |
Low RDS(on) trench technology
|
Bruckewell Technology L...
|
| AM3446N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| V23990-P630-A44-PM |
Trench Fieldstop Technology IGBT4 for low saturation loss
|
Vincotech
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| KRF7325 |
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| SIGC42T170R3G08 |
1700V Trench Field Stop technology low turn-off losses short tail current
|
Infineon Technologies AG
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
|
Fairchild Semiconductor
List of Unclassifed Manufacturers
|
| V23990-P823-F-P2-14 V23990-P823-F-PM |
Trench Fieldstop IGBT3 Technology
Compact and Low Inductance Design
|
Vincotech
|
