| PART |
Description |
Maker |
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| IXKH35N60C5 |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXYS Corporation
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| AM2317P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| MSQ7434N |
Low rDS(on) provides higher efficiency and
|
Bruckewell Technology L...
|
| AM1535CE |
Low rDS(on) provides higher efficiency and extends battery life
|
Analog Power
|
| AM3829P |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
| SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
|
|
