| PART |
Description |
Maker |
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| AM2302N |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| MSE20N06N |
Low RDS(on) trench technology
|
Bruckewell Technology L...
|
| AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| IRF7663PBF |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
International Rectifier
|
| FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT
NPT Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
|
Fairchild Semiconductor
List of Unclassifed Manufacturers
|
| IRF7329PBF IRF7329TRPBF IRF7329PBF-15 |
HEXFET Power MOSFET
Ultra Low On-Resistance
Trench Technology
|
IRF[International Rectifier]
|
