PART |
Description |
Maker |
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块 From old datasheet system HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STI50DE100 |
Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 ohm
|
STMicroelectronics
|
IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
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UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8 MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6 MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制 Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制 MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
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意法半导 STMicroelectronics N.V.
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STS7C4F30L |
7 A, 30 V, 0.026 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET⑩ POWER MOSFET P-CHANEL 30V - 0.027 OHM - 6A SO-8 STRIPFET II POWER MOSFET N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET POWER MOSFET
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STMICROELECTRONICS[STMicroelectronics]
|
NTD5407NT4G |
Power MOSFET 40 V, 38 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 7.6 A, 40 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
MT58L128L18FT-6.8T |
128K X 18 STANDARD SRAM, 6.8 ns, PQFP100 PLASTIC, MS-026, TQFP-100 128K X 18 CACHE SRAM, 6.8 ns, PQFP100 PLASTIC, MS-026, TQFP-100
|
Cypress Semiconductor, Corp.
|
8432BYI-51LF 8432BYI-51T 8432BYI-51LFT |
700 MHz, OTHER CLOCK GENERATOR, PQFP32 7 X 7 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MS-026, LQFP-32 700 MHz, OTHER CLOCK GENERATOR, PQFP32 7 X 7 MM, 1.40 MM HEIGHT, MS-026, LQFP-32
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Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
IRFP254A |
$GYDQFHG 3RZHU 026)(7
|
International Rectifier
|
ICS8430DYI-11LFT ICS8430DYI-11T |
700 MHz, OTHER CLOCK GENERATOR, PQFP32 7 X 7 MM, 1.40 MM HEIGHT, MS-026, LQFP-32
|
Integrated Device Technology, Inc.
|
STS6DNF30V |
DUAL N-CHANNEL 30V 0.026 OHM 6A SO-8 2.5V DRIVE STRIPFET II POWER MOSFET DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET II POWER MOSFET
|
ST Microelectronics STMicroelectronics
|
DSIPC30F6015T-20E/PT DSIPC30F6015-20E/PT |
16-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PQFP64 10 X 10 MM, 1 MM HEIGHT, PLASTIC, MS-026, TQFP-64
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3M Company
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