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FTD2011 - Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V

FTD2011_7552644.PDF Datasheet

 
Part No. FTD2011
Description Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V

File Size 152.80K  /  2 Page  

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 Full text search : Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V


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MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):5.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
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MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
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MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-220; Leaded Process Compatible:No 300mA低压差线性稳压器,带有关
MOSFET, N D-PAK;; Transistor type:MOSFET; Transistor polarity:N Channel; Voltage, Vds max:30V; Case style:TO-252 (D-Pak); Current, Id cont:63A; Current, Idm pulse:50A; Power, Pd:65.2W; Resistance, Rds on:0.0095R;
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