| PART |
Description |
Maker |
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| HYS64V32300GU HYS72V32300GU |
3.3 V 32M × 64-Bit SDRAM Module(3.3 V 32M × 64同步动态RAM模块)
3.3 V 32M × 72-Bit SDRAM Module(3.3 V 32M × 72同步动态RAM模块)
|
SIEMENS AG
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| S29JL032H90TAI221 S29JL032H70TFI220 S29JL032H70TAI |
32M BIT CMOS 3.0V FLASH MEMORY
|
SPANSION[SPANSION]
|
| MX25L3205AMC-20 MX25L3205AMC-20G MX25L3205AMI-20G |
32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
| KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| MX25L3275EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L3225DM2I10G |
32M-BIT [x 1/x 2/x4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
