| PART |
Description |
Maker |
| 2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速，饱和硅晶体管开关进步党（高速，饱和开关型进步党硅晶体管）
|
TT electronics Semelab, Ltd.
STMicroelectronics N.V.
SEME-LAB[Seme LAB]
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| SMB SMBG16 SMBJ85 SMBJ58 SMBJ54 SMBJ110 SMBG150 SM |
UNI- AMD BI-DIRECTIONAL SURFACE MOUNT
From old datasheet system
High Speed CMOS Logic 4-by-4 Register File 16-CDIP -55 to 125
Crimp Socket Contact; Wire Size (AWG):18-24; Contact Material:Brass; Contact Plating:Gold; Contact Termination:Crimp
CANMS3470L14-5PL/C
High Speed CMOS Logic Octal Transparent Latches with 3-State Output 20-CDIP -55 to 125
CANMS3470L24-19SL/C
High Speed CMOS Logic Non-Inverting Hex Buffer/Line Driver with 3-State Outputs 16-CDIP -55 to 125
UNI- AMD BI-DIRECTIONAL SURFACE MOUNT 联康AMD公司的双向表面贴
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-CDIP -55 to 125 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
PV SERIES 联康AMD公司的双向表面贴
UNI- AMD BI-DIRECTIONAL SURFACE MOUNT 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
EIC discrete Semiconductors
|
| IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGR40N60C2 IXGR40N60C2D1 |
56 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs
|
IXYS Corporation
IXYS, Corp.
|
| FS14SM-12 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 14 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| STGW20H60DF STGWT20H60DF |
Low thermal resistance
600 V, 20 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| RJH60F5DPQ-A0-15 |
600 V - 40 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| FK7SM-12 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 7 A, 600 V, 1.63 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
Powerex Power Semiconductors
|
| RJK6066DPP-M0 RJK6066DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
5 A, 600 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
|
Renesas Electronics Corporation
|
