| PART |
Description |
Maker |
| STP12NM50N STD12NM50N STF12NM50N STB12NM50N |
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| IRFR9024N IRFU9024N IRFRU9024N IRFR9024NTR IRFR902 |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-55V Rds(on)=0.175ohm Id=-11A)
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) P通道表面贴装HEXFET功率MOSFET的性（P沟道表贴型的HEXFET功率马鞍山场效应管）
|
http://
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9640 RF1S9640SM |
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| IRFN9240 |
POWER MOSFET N-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-11A)
POWER MOSFET N-CHANNEL(BVdss=-200V Rds(on)=0.51ohm Id=-11A)
|
IRF[International Rectifier]
|
| STP11NM60 |
N-CHANNEL 600V - 0.4Ohm - 11A TO-220 Mdmesh Power MOSFET
|
SGS Thomson Microelectronics
|
| STP11NM60FD STP11NM60FDFP |
N-CHANNEL 600V 0.40 OHM 11A TO-220/TO-220FP FDMESH POWER MOSFET
|
ST Microelectronics
|
| ITF86182SK8T |
11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STW12NK90Z |
N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
| STB11NM60A-1 STP11NM50AFP STP11NM60A STP11NM60AFP |
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
