| PART |
Description |
Maker |
| 2SK3524 |
N-CHANNE SILLCON POWER MOSFET
N-CHANNE SILLCON POWER MOSFET - CHANNE SILLCON功率MOSFET
|
Fuji Electric
Electronic Theatre Controls, Inc.
|
| STB11NM60-1 STB11NM60T4 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
STMICROELECTRONICS
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STP25NM60N STW25NM60N STB25NM60N STF25NM60N STB25N |
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
N-channel 600 V, 0.130 Ω , 21 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
|
http://
STMicroelectronics
|
| FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRFR9120 IRFU9120 IRFR91209A |
5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| FQU5N60C FQU5N60CTU FQD5N60C FQD5N60CTM |
N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm
|
Fairchild Semiconductor
|
| APT30M60J |
31 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
|
| NDF04N60ZG NDF04N60ZH NDD04N60Z-1G NDD04N60ZT4G |
N-Channel Power MOSFET 600 V, 2.0 Ohm
|
ON Semiconductor
|
|
