PART |
Description |
Maker |
MCR264-4-D MCR264-4 |
Silicon Controlled Rectifier Reverse Blocking Thyristor(40A400V硅控整流器反向截止晶闸管) 40 A, 200 V, SCR, TO-220AB Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流(电压范围- 50000伏特,电六点○安培)
|
WINGS[Wing Shing Computer Components] Vishay Intertechnology, Inc.
|
2N6504-D |
Reverse Blocking Thyristors
|
ON Semiconductor
|
TFA58I TFA58S TFA5X |
Reverse Blocking Triode Thyristor
|
Sanken
|
2N3008 |
SILICON REVERSE-BLOCKING TRIODE THYRISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
DGT305SE18 DGT305RE |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
TIC108A TIC108B TIC108C TIC108D TIC108E TIC108M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
TIC106A TIC106B TIC106C TIC106D TIC106E TIC106M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
2N6507 2N6504 2N6505 |
SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
|
Digitron Semiconductors
|
MCR8DCMT4 MCR8DCNT4G MCR8DCM MCR8DCMT4G MCR8DCN MC |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
C122B1 C122F1G C122B1G C122F1 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
MCR68-2 MCR68-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|