| PART |
Description |
Maker |
| T591B227M006ATE070 |
T591, Tantalum, Polymer Tantalum, 220 uF, 20%, 6.3 VDC, SMD, Polymer, Molded, Low ESR, 70 mOhms, 3528, Height Max = 2.1mm
|
Kemet Corporation
|
| TPN3021 TPN3021RL |
Tripolar Overvoltage Protection for Network Interfaces(用于网络接口的三极过压保
TRIPOLAR OVERVOLTAGE PROTEC-TION FOR NETWORK INTERFACES
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| T527I226M010ATE200-17 |
Tantalum, Polymer Tantalum, Reduced Volume, T527, 22 uF, 20%, 10 V, 3216, SMD, Polymer, Molded, Face Down Terminals, 200mOhms, 1mm
|
Kemet Corporation
|
| T530D157M010ATE010 |
T530, Tantalum, Polymer Tantalum, Multi-Anode, 150 uF, 20%, 10 V, SMD, Polymer, Molded, Multiple Anodes, Low ESR, 10mOhms, 7343, Height Max = 3.1mm
|
Kemet Corporation
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| T543A226K010ATE080 |
Tantalum, Polymer Tantalum, COTS, T543_COTS, 22 uF, 10%, 10 V, 3216, SMD, Polymer, Molded, COTS, Up Screening, N/A, 80mOhms, Height Max = 1.8mm
|
Kemet Corporation
|
|
