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IXKH35N60C5 - N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

IXKH35N60C5_7604974.PDF Datasheet


 Full text search : N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge


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IXFH52N30Q IXFK52N30Q IXFT52N30Q    N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
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From old datasheet system
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From old datasheet system
P-Channel Enhancement-Mode MOSFET Transistors
Vishay Intertechnology,Inc.
APT10035B2FLL APT10035LFLL POWER MOS 7 1000V 28A 0.350 Ohm
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology Ltd.
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From old datasheet system
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STMicro
APT5010B2FLL APT5010LFLL APT5010B2 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT6013B2FLL APT6013LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 43A 0.130 Ohm
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