| PART |
Description |
Maker |
| IRFB23N15D IRFSL23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V,23A,SMPS MOSFET for High frequency DC-DC converters(150V,23A,开关电MOS场效应管，用于高DC-DC变换 50V3A条，开关电源的MOSFET的高频率DC - DC转换器（50V3A条，开关电源马鞍山场效应管，用于高频的DC - DC变换器）
|
International Rectifier, Corp.
|
| IRF9540NL IRF9540NS IRF9540NSTRL |
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
|
IRF[International Rectifier]
|
| FRM140R FRM140D FRM140H |
23A/ 100V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs
23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FRF9150R3 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 23A I(D) | TO-254AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直|3A条（丁）|54AA
|
Intersil, Corp.
|
| IRFB23N15D IRFS23N15D IRFSL23N15D IRFB23N15 |
Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| Q67040-S4381 IDD23E60 |
Silicon Power Diodes - 23A EmCon in TO252
Fast Switching EmCon Diode
|
INFINEON[Infineon Technologies AG]
|
| 0923180817 |
Picoflex PF-50 IDT-Board In Z-Style, 8 Circuits, 0.17m (6.69") Length
|
Molex Electronics Ltd.
|
| IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）最大值\u003d 0.014ohm，身份证\u003d 72A条）
|
IR
International Rectifier, Corp.
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
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