| PART |
Description |
Maker |
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS6911 |
Fast switching speed, Low gate charge
Dual N-Channel Logic Level PowerTrench? MOSFET 20V, 7.5A, 13mΩ
Dual N-Channel Logic Level PowerTrench㈢ MOSFET 20V, 7.5A, 13mヘ
Dual N-Channel Logic Level PowerTrench??MOSFET 20V, 7.5A, 13m??/td>
| SOP
|
List of Unclassifed Manufacturers
FAIRCHILD[Fairchild Semiconductor]
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY
20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| STS4DPFS2LS |
P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFETMOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRF7106 IRF7106TR |
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)
|
IRF[International Rectifier]
|
| FDG6332CF085 |
700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench? MOSFETs
20V N & P-Channel PowerTrench?MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
