PART |
Description |
Maker |
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon
|
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
|
Siemens Semiconductor G... Diotec Elektronische Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
2SD1624 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
BCV61C BCV61A |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
SMBTA06 SMBTA0607 |
NPN Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|