| PART |
Description |
Maker |
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| AK48256G |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CO...
|
| AK5321024BW09 |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| SMJ44400HR SMJ44400JD |
1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY
|
ETC
|
| HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
| AK481024G AK481024S |
1,048,576 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
| AK5816384 |
1,048,576 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK58256 |
4,194,304 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK591024AG AK591024AGP AK591024AS AK591024ASP AK59 |
1,048,576 Word X 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
http://
|
| AK59256AG AK59256AS |
262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5361024W |
2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
