| PART |
Description |
Maker |
| SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| AM2300N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| MSQ7434N |
Low rDS(on) provides higher efficiency and
|
Bruckewell Technology L...
|
| AM1331P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2342NE |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
|
