| PART |
Description |
Maker |
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| AM2317P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM1331P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL
SIPMOS Power Transistor
Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| MP5073 |
5.5V, 2A Low RDSON Load Switch With Programmable Current Limit
|
Monolithic Power System...
|
| MP5077 |
5.5V, 7A, Low RDSON Load Switch With Programmable Current Limit
|
Monolithic Power System...
|
| AM3459P |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| AM3434N |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
