| PART |
Description |
Maker |
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| BC80725MTFNL BC80816MTF FAIRCHILDSEMICONDUCTORCORP |
PNP Epitaxial Silicon Transistor 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| UF1K-T3 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| 1N4003TA2B2 1N4006TR |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
NIHON INTER ELECTRONICS CORP
|
| BYV26D-5410/4 BYV26E-5410/4 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP
|
Vishay Beyschlag
|
| 1N5062GP-HE3/73 1N5060GP-HE3/54 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
Glass Passivated Junction Rectifier
|
Vishay Beyschlag
Vishay Siliconix
|
| BC337-25RL1G |
Amplifier Transistors NPN Silicon 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| BYV26C-TR BYV26B-TR BYV26A-TR BYV26B-TAP BYV26D-TR |
1 A, 600 V, SILICON, SIGNAL DIODE ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
1 A, 400 V, SILICON, SIGNAL DIODE ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
1 A, 200 V, SILICON, SIGNAL DIODE ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP GLASS PACKAGE-2
|
Vishay Beyschlag
|
| JAN1N5620 JANTX1N5614 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| 2N6509TG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS 25 A, 800 V, SCR, TO-220AB
|
ON Semiconductor
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
|
