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ST2318SRG - ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

ST2318SRG_7629312.PDF Datasheet
 
Part No. ST2318SRG
Description ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
File Size 209.29K  /  7 Page  

Maker

Stanson Technology

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: ST2310HI
Maker: ST
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $0.18
  100: $0.18
1000: $0.17

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