| PART |
Description |
Maker |
| FM4006L-HF-W FM4007L-HF FM4003L FM4004L-HF-T |
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 1000 V, SILICON, SIGNAL DIODE
1 A, 200 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
|
RECTRON LTD
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| BC80725MTFNL BC80816MTF FAIRCHILDSEMICONDUCTORCORP |
PNP Epitaxial Silicon Transistor 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| M6 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
|
SENSITRON SEMICONDUCTOR
|
| 1N4003-A 1N4004-A 1N4003-T 1N4002L-T 1N4006L-T 1N4 |
1.0A RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE
1.0A RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| MUR1100ERLG MUR1100EG MUR180E_06 MUR1100E MUR1100E |
SWITCHMODE Power Rectifiers 1 A, 800 V, SILICON, SIGNAL DIODE
|
ONSEMI[ON Semiconductor]
|
| UF1003-A UF1002-A UF1007-A UF1007-B UF1001-A UF100 |
1.0A ULTRA-FAST RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| EGP10D EGP10A EGP10G EGP10K EGP10B EGP10F EGP10J |
1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| BCW67BCW68 BCW68F Q62702-C1555 Q62702-C1893 BCW68 |
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| JAN1N6809UEG2 JAN1N6807UEG2 JANTX1N6810UEG2 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, DO-214BA, 2 PIN, Signal Diode
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, DO-214BA, 2 PIN, Signal Diode
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, PLASTIC, DO-214BA, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
|
