| PART |
Description |
Maker |
| BAT74S |
Low forward voltage Guard ring protected Small SMD package.
|
TY Semiconductor Co., Ltd
|
| 1N5177W |
Low Forward Voltage Drop Guard Ring Constuction for Transient Protection
|
TY Semiconductor Co., Ltd
|
| 1PS76SB10 |
Low forward volatge Guard ring protected Very small plastic SMD package.
|
TY Semiconductor Co., L...
|
| BAT64-07 BAT6407 Q62702-A964 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KD103AW KD103BW |
Guard ring construction for transient protection
|
TY Semiconductor Co., Ltd
|
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| APT30GT60BRG APT30GT60BR08 |
Low Forward Voltage Drop
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Microsemi Corporation
Advanced Power Technology
|
| LFTVS18-1F3 |
Low forward voltage TransiTM, transient voltage suppressor
|
STMicroelectronics
|
