| PART |
Description |
Maker |
| 87919-0101 0879190101 |
1.00mm (.039) Pitch DDR-2 DIMM Socket, 25 Degree Reverse Angle, Through Hole, 240 Circuits, 1.8V Voltage Key, 2.79mm (.110) Tail Length
|
Molex Electronics Ltd.
|
| 0879190001 87919-0001 |
1.00mm (.039) Pitch DDR-2 DIMM Socket, 25 Degree Reverse Angle, Through Hole, 240 Circuits, 1.8V Voltage Key, 2.79mm (.110) Tail Length
|
Molex Electronics Ltd.
|
| ADP3603AR |
Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.45V) 8-SM8 -40 to 110 SWITCHED CAPACITOR REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO8
|
Analog Devices, Inc.
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| HUFA75829D3S HUFA75829D3 HUFA75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| 278071110012833 |
CONN, 110 POS, CPCI, TYPE A 110 CONTACT(S), FEMALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, PRESS FIT, RECEPTACLE
|
Electronic Theatre Controls, Inc.
|
| MMFT2406T1G MMFT2406T3 MMFT2406T3G MMFT2406T1 |
Power MOSFET 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 700 mA, 240 Volts
|
ONSEMI[ON Semiconductor]
|
| 2808 |
110-Channel CATV Optical Receiver
|
EMCORE
|
| AG-320240D |
320 x 240 dots 1/240 Duty
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| NX8563LA-AZ NX8563LA509-CD NX8563LAS509-CD NX8563L |
; Leaded Process Compatible:Yes
TVS UNI-DIR 68V 1500W DO-201
TVS BI-DIR 68V 1500W DO-201
3A 100V Schottky Rectifier; Package: Axial Lead 9.50x5.30mm, 25.4x1.20mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 500
CONVERTER DC-DC 1W 5V/14V SGL
CONVERTER DC-DC 1W 5V/12V SGL
CONVERTER DC-DC 1W 7V/7V DUAL
DIODE ZENER SINGLE 200mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-323 3K/REEL
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
MILITARY BATTERY RoHS Compliant: NA 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-123 3K/REEL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
CONVERTER DC-DC 1W 5V/5V DUAL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块2.5 GB /秒，110公里240公里REACH的DWDM城域和有线电视领域的应用
|
California Eastern Laboratories, Inc.
|
| FSF250D3 FSF250R4 FSF250 FSF250D FSF250D1 FSF250R |
24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MHW7272 |
27 dB GAIN 750 MHz 110.CHANNEL CATV AMPLIFIER
|
Motorola, Inc
|
|
