| PART |
Description |
Maker |
| IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)
Hexfet? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF140 |
28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| IRC530-007 IRC540PBF |
IRFL210, SiHFL210 Power MOSFET
Trans MOSFET N-CH 100V 28A 5-Pin(5 Tab) TO-220
|
Vishay Siliconix
|
| UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10L-TA3-T UT |
25A, 100V P-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRF510 IRF511 IRF512 IRF513 |
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
|
Harris Corporation
|
| IRF9150 |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
Samsung semiconductor
International Rectifier
Intersil Corporation
|
| HIP4086AABZ HIP4086ABZ HIP4086ABZT |
80V, 500mA, 3-Phase MOSFET Driver 1.25A peak turn-off current
80V/0.5A Peak Three Phase Driver; Temperature Range: -25°C to 85°C; Package: 24-SOIC T&R 1.1 A HALF BRDG BASED MOSFET DRIVER, PDSO24
|
Intersil Corporation
|
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| ISL89401AR3Z ISL89400AR3Z ISL89400 |
100V, 1.25A Peak, High Frequency Half-Bridge Drivers
|
Intersil Corporation
|
| CDSUR4448 |
Small Signal Switching Diodes, V-RRM=100V, V-R=80V, P-D=200mW, I-F=125mA
|
Comchip Technology
|
