| PART |
Description |
Maker |
| IXA27IF1200HJ |
Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
IXYS Corporation
|
| MCP103 MCP121 MCP131 |
The MCP103 Series are CMOS voltage supervisors are well suited for many portable and consumer electrics applications due to the extremely ...
The MCP121 Series of CMOS voltage detectors are well suited for many portable and consumer electrics applications due to the extremely ...
The MCP131 Series, of CMOS voltage supervisors, are well suited for portable and consumer electrics applications due to the extremely ...
|
Microchip
|
| IRFP460PBF |
Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead
|
International Rectifier
|
| WSYN-50-120-12DC-A WSYN-400-220-12DC-A WSYN-400-40 |
POWER/SIGNAL RELAY, DPST, MOMENTARY, 12VDC (COIL), 5A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
Paralleling Relays
|
Tyco Electronics
|
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT0408-05B |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IPT1208-SEA IPT1208-CEA IPT1208-BEA IPT1208-TEA |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| AOK20B120E1 |
Low turn-off switching loss due to fast turn-off time
|
Alpha & Omega Semicondu...
|
| IPT12Q06-CEB IPT12Q06-BEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| 503480-1200 5034801200 |
0.50mm (.020) Pitch Easy-On BackFlip FPC Connector
0.50mm (.020") Pitch Easy-On垄芒 BackFlip垄芒 FPC Connector
|
Molex Electronics Ltd.
|
