| PART |
Description |
Maker |
| N25Q128A11ESE40G |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| N25Q256A13E1240 N25Q256A13EF840 N25Q256A13EF840F N |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| N25Q256A11ESF40 N25Q256A11ESF40F N25Q256A11E1240 |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| N25Q064A13ESF40G N25Q064A13ESFA0F N25Q064A13E1240F |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
64Mb, 3V, Multiple I/O Serial Flash Memory
64Mb, 3V, Multiple I/O Serial Flash Memory
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q128A13ESE40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q032A11EF640F |
Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase
Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| JS28F00AP30BTFA JS28F00AP30EFA JS28F00AP30BFX JS28 |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
MICRON
|
| JS28F256P30TFA |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| MX25L6445EM MX25L6445EM2 MX25L6445EM2I10G MX25L644 |
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L12835E MX25L12835EMI-10G MX25L12835EZNI-10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
|
Macronix International
|
| SST49LF004C-33-4C-NHE SST49LF004C-33-4C-WHE SST49L |
4 Mbit Uniform Sector, Serial Flash Memory 512K X 8 FLASH 3V PROM, 11 ns, PDSO32
4 Mbit Uniform Sector, Serial Flash Memory 1M X 8 FLASH 3V PROM, 11 ns, PQCC32
4 Mbit Uniform Sector, Serial Flash Memory 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
4 Mbit / 8 Mbit LPC Serial Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
Silicon Storage Technol...
|
| M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
